A Comparative Study of Interface Trap Induced Drain Leakage Current in Various n-MOSFET Structures

• WANG Tahui

  Department of Electronics Engineering, Institute of Electronics, National Chiao-Tung University

• CHANG T. E.

  Department of Electronics Engineering, Institute of Electronics, National Chiao-Tung University

• CHIANG L. P.

  Department of Electronics Engineering, Institute of Electronics, National Chiao-Tung University

• HUANG C.

  Technology Development Dept., Macronix International Co.

収録刊行物

• Extended abstracts of the ... Conference on Solid State Devices and Materials

  Extended abstracts of the ... Conference on Solid State Devices and Materials 1995 875-877, 1995-08-21

詳細情報

• CRID: 1571417125195167488
• NII論文ID: 10017203522
• NII書誌ID: AA10777858
• 本文言語コード: en
• データソース種別:
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