Fabrication of high-quality nitride semiconductors by facet control technique

• MIYAKE Hideto

  Department of Electric and Electronic Engineering, Mie University

• HIRAMATSU Kazumasa

  Department of Electric and Electronic Engineering, Mie University

Bibliographic Information

Other Title

• ファセット制御技術による高品質窒化物半導体の作製
• 研究紹介 ファセット制御技術による高品質窒化物半導体の作製
• ケンキュウ ショウカイ ファセット セイギョ ギジュツ ニ ヨル コウヒンシツ チッカブツ ハンドウタイ ノ サクセイ

Abstract

Facet control during the growth of nitride semiconductors is a promising technique for obtaining a high-quality epitaxial GaN layer with low threading dislocation (TD) density. We have reported that facet-controlled epitaxial lateral overgrowth (FACELO) by metalorganic vapor phase epitaxy (MOVPE) for growth of GaN on a sapphire is a useful technique for reducing TD density and enables us to achieve TD densities on the order of 10⁶ cm^-2. AlGaN with high AlN molar fraction and low dislocation density is necessary for fabricating deep-UV emitters and detectors. A reduction in the TD density of AlGaN over the entire area of a surface was achieved by low-pressure MOVPE using a textured epitaxial AlN substrate. The AlN molar fraction of crack-free AlGaN is 0.51, and the TD density is estimated to be 8.8×10⁷cm^-2 from CL measurement, which is two orders of magnitude lower than that of AlGaN grown on a flat AlN epitaxial layer.

Journal

• Oyo Buturi

  Oyo Buturi 75 (4), 467-472, 2006-04-10

  The Japan Society of Applied Physics

Keywords

• GaN
• AlGaN
• AlN
• epitaxial lateral overgrowth
• ELO
• facet control
• FACELO
• dislocation density

Details

• CRID: 1390845702287342848
• NII Article ID: 10017541097
• NII Book ID: AN00026679
• DOI: 10.11470/oubutsu.75.4_467
• ISSN: 21882290
• ISSN: 03698009
• NDL BIB ID: 7915331
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I7915331
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed