Novel Quaternary AlInGaN/GaN Heterostructure Field Effect Transistors on Sapphire Substrate

Access this Article

Search this Article

Author(s)

Journal

  • Japanese journal of applied physics Pt. 1 Regular papers, brief communications & review papers

    Japanese journal of applied physics Pt. 1 Regular papers, brief communications & review papers 45(7), 5728-5731, 2006-07-15

    IOP Publishing

References:  7

Cited by:  3

Codes

  • NII Article ID (NAID)
    10017999632
  • NII NACSIS-CAT ID (NCID)
    AA10457675
  • Text Lang
    ENG
  • Article Type
    Journal Article
  • Journal Type
    大学紀要
  • ISSN
    00214922
  • NDL Article ID
    7978477
  • NDL Source Classification
    ZM35(科学技術--物理学)
  • NDL Call No.
    Z53-A375
  • Data Source
    CJP  CJPref  NDL  Crossref 
Page Top