Analysis of O(1D) Distribution by Time-Resolved Measurement of Ozone Density for Application of UV-light Excited Ozone to Oxidation Process

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  • TOSAKA Aki
    National Institute of Advanced Industrial Science and Technology
  • NISHIGUCHI Tetsuya
    National Institute of Advanced Industrial Science and Technology Meidensha Corporation
  • NONAKA Hidehiko
    National Institute of Advanced Industrial Science and Technology
  • ICHIMURA Shingo
    National Institute of Advanced Industrial Science and Technology

Bibliographic Information

Other Title
  • オゾン濃度その場測定によるＵＶ光励起オゾン低温酸化プロセス中のＯ（｀１´Ｄ）の時間分布の解析
  • オゾン濃度その場測定によるUV光励起オゾン低温酸化プロセス中のO(1D)の時間分布の解析
  • オゾン ノウド ソノバ ソクテイ ニ ヨル UVコウ レイキ オゾン テイオン サンカ プロセス チュウ ノ O 1D ノ ジカン ブンプ ノ カイセキ

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Abstract

  Silicon oxidation process using UV-light excited ozone, i.e., ca. 100% ozone atmosphere irradiated by KrF excimer laser light (λ=248 nm), is one of the most promising techniques to fabricate a high-quality SiO2 film at low temperatures. To clarify the mechanism of the silicon oxidation and to optimize the conditions of oxidation, we have done a time-resolved measurement of ozone density. The result shows that there are three stages of ozone density change. The calculated ozone density based on a reaction model fits the observed density at the first stage.<br>

Journal

  • Shinku

    Shinku 49 (3), 123-125, 2006

    The Vacuum Society of Japan

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