The Effects of Plasma Etching and Thermal Annealing Treatment on Single-crystal CdTe

DOI Web Site 18 References
  • KOIKE Kazuto
    New Materials Research Center, Osaka Institute of Technology
  • KATOH Takuma
    New Materials Research Center, Osaka Institute of Technology
  • HARADA Hisashi
    New Materials Research Center, Osaka Institute of Technology
  • OCHI Hi-izu
    New Materials Research Center, Osaka Institute of Technology
  • YANO Mitsuaki
    New Materials Research Center, Osaka Institute of Technology

Bibliographic Information

Other Title
  • ＣｄＴｅ単結晶表面に対するプラズマエッチングとＣｄ雰囲気中熱処理の効果
  • CdTe タンケッショウ ヒョウメン ニ タイスル プラズマ エッチング ト Cd フンイキ チュウ ネツ ショリ ノ コウカ

Search this article

Abstract

  The effect of H2 plasma irradiation on a Cl-doped CdTe(111)B crystal was studied by comparing with that of the same irradiation but combined with a post-irradiation thermal annealing in a Cd ambient. Photoluminescence (PL) property of the CdTe crystal was found to be degraded by a two-months storage in a low-pressure desiccator. Electron spectroscopy for chemical analysis revealed that native oxide such as TeO2 was formed on the CdTe surface after the storage. Irradiation by H2 plasma was effective to remove the oxide completely. However, the PL property after the H2 plasma irradiation did not recover the original one due to the formation of Cd vacancy by ion bombardment. The post-irradiation annealing was found to be effective to recover the damage by ion bombardment.<br>

Journal

  • Shinku

    Shinku 49 (3), 126-128, 2006

    The Vacuum Society of Japan

References(18)*help

See more

Keywords

Details 詳細情報について

Report a problem

Back to top