電力一定放電下の反応性スパッタリングによる酸化シリコンの組成制御

• 飯村 靖夫

  成蹊大学工学部

• 多久島 和弘

  成蹊大学工学部

• 中野 武雄

  成蹊大学理工学部

• 馬場 茂

  成蹊大学理工学部

書誌事項

タイトル別名

• Stoicheometry Control of Silicon Oxide Films by the Reactive Sputter Deposition with Constant Power Operation
• デンリョク イッテイ ホウデン カ ノ ハンノウセイ スパッタリング ニ ヨル サンカ シリコン ノ ソセイ セイギョ

抄録

  The mode transition of the DC reactive sputter deposition process has been studied for the fabrication and the stoichiometry control of SiO_X films. At a fixed Ar flow rate of 20 sccm and a pressure of 1 Pa (hence the pumping speed was also fixed), oxygen flow rate was modified and the transition between the metal and oxide modes was monitored by the cathode voltage. With a constant current operation of a DC power source, well known steep and hysteretic mode transition appeared. On the other hand, gentler transition with no hysteretic character was observed in a constant power operation. In the latter case, the dependence of the deposited film composition on the oxygen gas flow rate was examined by X-ray photoelectron spectroscopy. The increase in the film composition x from 0.5 to 2.0 was observed in a smaller flow rate region compared to the process mode transition. It can be attributed to the non-uniform deposition of Si atoms which work as oxygen absorber.<br>

収録刊行物

• 真空

  真空 49 (3), 171-173, 2006

  一般社団法人 日本真空学会

キーワード

• Electrical and Electronic Engineering
• Surfaces, Coatings and Films
• Condensed Matter Physics

詳細情報

• CRID: 1390282679040309888
• NII論文ID: 10018133584
• NII書誌ID: AN00119871
• DOI: 10.3131/jvsj.49.171
• ISSN: 18809413
• ISSN: 05598516
• NDL書誌ID: 7931114
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I7931114
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可