Low Threshold-14W/mm ZrO_2/AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors

• RAI Shiva

  Department of EE, University of South Carolina

• ADIVARAHAN Vinod

  Department of EE, University of South Carolina

• TIPIRNENI Naveen

  Department of EE, University of South Carolina

• KOUDYMOV Alexei

  Department of EE, University of South Carolina

• YANG Jinwei

  Department of EE, University of South Carolina

• SIMIN Grigory

  Department of EE, University of South Carolina

• ASIF KHAN Muhammad

  Department of EE, University of South Carolina

Journal

• Jpn. J. Appl. Phys.

  Jpn. J. Appl. Phys. 45 (6), 4958-4987, 2006-06-15

Keywords

• AlGaN
• GaN
• zirconium dioxide
• threshold voltage
• gate leakage current
• field-plate
• E-beam evaporation

Details

• CRID: 1573668925161776384
• NII Article ID: 10018148404
• NII Book ID: AA10457675
• ISSN: 00214922
• Text Lang: en
• Data Source:
  • CiNii Articles