Electrical Characteristics of Epitaxial γ-Al2O3/Si for Quantum Tunneling Device

• Jang-Seop Kim

• Mohammad Shahjahan

• Halima Khatun Mosammat

Bibliographic Information

Other Title

• Electrical Characteristics of Epitaxial ガンマ Al2O3 Si for Quantum Tunneling Device

Abstract

コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌

Journal

• Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP

  Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 45 (6A), 5107-5109, 2006-06

  Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

Keywords

• heteroepitaxial structure
• F-N tunneling
• leakage current
• thin film device
• MBE

Details

• CRID: 1520009408225761408
• NII Article ID: 10018148817
• NII Book ID: AA10457675
• ISSN: 00214922
• ISSN: 13474065
• DOI: 10.1143/jjap.45.5107
• NDL BIB ID: 7941184
• Web Site: http://id.ndl.go.jp/bib/7941184
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I7941184
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.45.5107
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.45.5107/pdf
• Text Lang: en
• NDL Source Classification:
  • ZM35(科学技術--物理学)
• Data Source:
  • NDL
  • Crossref
  • CiNii Articles