Determination of Time to Breakdown of 0.8-1.2nm EOT HfSiON Gate Dielectrics with Poly-Si and Metal Gate Electrodes

• INUMIYA Seiji

  Semiconductor Leading Edge Technologies, Inc.

• NARA Yasuo

  Semiconductor Leading Edge Technologies, Inc.

Bibliographic Information

Other Title

• 極薄HfSiONゲート絶縁膜の絶縁破壊時間の決定

Journal

• 電気学会研究会資料. EFM, 電子材料研究会

  電気学会研究会資料. EFM, 電子材料研究会 2006 (1), 9-13, 2006-06-28

Keywords

• HfSiON
• high-k
• dielectric breakdown
• carrier separation

Details

• CRID: 1573950400148825216
• NII Article ID: 10018156833
• NII Book ID: AN10442556
• Text Lang: ja
• Data Source:
  • CiNii Articles