Nitrogen-Originated NBTI Mechanism in SiON with High-Nitrogen Concentration

• SAKUMA Kiwamu

  Toshiba Corporation

• MATSUSHITA Daisuke

  Toshiba Corporation

• NAKASAKI Yasushi

  Toshiba Corporation

• KATO Koichi

  Toshiba Corporation

• MURAOKA Koichi

  Toshiba Corporation

• MITANI Yuuichiro

  Toshiba Corporation

Bibliographic Information

Other Title

• 高窒素濃度SiON膜のNBTI特性とその窒素起因の劣化メカニズム

Journal

• 電気学会研究会資料. EFM, 電子材料研究会

  電気学会研究会資料. EFM, 電子材料研究会 2006 (1), 15-20, 2006-06-28

Keywords

• NBTI
• Threshold voltage shift
• SiON
• High nitrogen concentration
• Flat-band voltage shift
• Reliability

Details

• CRID: 1572261550288562176
• NII Article ID: 10018156844
• NII Book ID: AN10442556
• Text Lang: ja
• Data Source:
  • CiNii Articles