Improvement of Metal–Oxide Semiconductor Interface Characteristics in Complementary Metal–Oxide Semiconductor on Si(111) by Combination of Fluorine Implantation and Long-Time Hydrogen Annealing

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著者

    • Kato Yoshiko Kato Yoshiko
    • Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan
    • Takao Hidekuni Takao Hidekuni
    • Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan
    • Sawada Kazuaki [他] Sawada Kazuaki
    • Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan
    • Ishida Makoto
    • Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan

抄録

In this paper, a method of improving the characteristics of complementary metal–oxide semiconductor (CMOS) on Si(111) wafers is presented. The combination of fluorine (F) implantation and long-time hydrogen annealing was applied to (111)CMOS devices for the first time. The interface state density in a (111)MOS device was dramatically reduced to 8% ($2.74 \times 10^{10}$ cm-2$\cdot$eV-1) of the original value ($3.40\times 10^{11}$ cm-2 $\cdot$eV-1). As a result, field-effect mobility was increased by about 70% and the 1/f noise level was halved as compared with (111)CMOS devices without the improvement method. The performance of improved (111)CMOS devices was comparable to that of (100)CMOS devices fabricated in the same batch process. The improvement effect of this method is much better than that of our previous method which included only long-time H2 annealing.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters

    Japanese journal of applied physics. Pt. 2, Letters 45(4), L108-L110, 2006-02-25

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018158776
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    7821822
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
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