Surface Control Process of AlGaN for Suppression of Gate Leakage Currents in AlGaN/GaN Heterostructure Field Effect Transistors

• Hashizume, Tamotsu

• Kotani, Junji

• Basile, Alberto

• Kaneko, Masamitsu

抄録

We proposed a surface control process for suppressing the tunneling leakage of Schottky gates on AlGaN/GaN heterostructures. For the recovery of nitrogen-vacancy-related defects and reduction in the amount of oxygen impurities at the AlGaN surface, the process consisted of nitrogen radical treatment, the deposition of an ultrathin Al layer, UHV annealing and finally the removal of the Al layer. Ni/Au Schottky gates fabricated on processed AlGaN surfaces showed pronounced reduction in leakage current and a clear temperature dependence of I-V characteristics, indicating the effective suppression of tunneling leakage in current transport through AlGaN Schottky interfaces.

収録刊行物

• Japanese Journal of Applied Physics. Pt. 2, Letters & express letters

  Japanese Journal of Applied Physics. Pt. 2, Letters & express letters 45 (4-7), L111-L113, 2006-02

  Japan Society of Applied Physics

キーワード

• AlGaN
• GaN
• gate leakage current
• tunnel
• surface control
• XPS

詳細情報

• CRID: 1050564288948770176
• NII論文ID: 10018158791
• NII書誌ID: AA11906093
• HANDLE: 2115/33075
• NDL書誌ID: 7821854
• ISSN: 00214922
• Web Site: http://id.ndl.go.jp/bib/7821854
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I7821854
• 本文言語コード: en
• 資料種別: journal article
• データソース種別:
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  • NDL
  • CiNii Articles