Improving High-k Gate Dielectric Properties by High-Pressure Water Vapor Annealing

• Prakaipetch Punchaipetch

• Makoto Miyashita

• Yukiharu Uraoka

Bibliographic Information

Other Title

• Improving High k Gate Dielectric Properties by High Pressure Water Vapor Annealing

Journal

• Japanese journal of applied physics. Part 2, Letters & express letters

  Japanese journal of applied physics. Part 2, Letters & express letters 45 (4-7), L120-123, 2006

  Tokyo : Japan Society of Applied Physics

Keywords

• high-k gate oxides
• low temperature annealing

Details

• CRID: 1520291855205467520
• NII Article ID: 10018158834
• NII Book ID: AA11906093
• ISSN: 00214922
• NDL BIB ID: 7821912
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I7821912
• Text Lang: en
• NDL Source Classification:
  • ZM35(科学技術--物理学)
• Data Source:
  • NDL
  • CiNii Articles