Nonalloyed Ohmic Formation for p-Type AlGaN with p-Type GaN Capping Layers Using Ohmic Recessed Technique

• Yow-Jon Lin

Bibliographic Information

Other Title

• Nonalloyed Ohmic Formation for p Type AlGaN with p Type GaN Capping Layers Using Ohmic Recessed Technique

Journal

• Japanese journal of applied physics. Part 2, Letters & express letters

  Japanese journal of applied physics. Part 2, Letters & express letters 45 (1-3), L86-88, 2006

  Tokyo : Japan Society of Applied Physics

Keywords

• ohmic contact
• specific contact resistance
• two-dimensional hole gas

Details

• CRID: 1521699230612655232
• NII Article ID: 10018159744
• NII Book ID: AA11906093
• ISSN: 00214922
• NDL BIB ID: 7790544
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I7790544
• Text Lang: en
• NDL Source Classification:
  • ZM35(科学技術--物理学)
• Data Source:
  • NDL
  • CiNii Articles