Low Ohmic Contact Resistance on Lattice-matched InAlGaN Quaternary Alloy Capping Layers over AlGaN/GaN Heterojunction Field Effect Transistors

• NAKAZAWA S.

収録刊行物

• 6^<th> Topical Workshop on Heterostructure Micro electronics TWHM 2005

  6^<th> Topical Workshop on Heterostructure Micro electronics TWHM 2005 2005

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• CRID: 1573387450192931712
• NII論文ID: 10018216248
• データソース種別:
  • CiNii Articles