High Current, High Power, and High Linearity Ohmic Recess InGaP/InGaAs Doped Channel FETs

• CHIEN Feng-Tso

  Dept. of Electronic Engineering, Feng Chia University

• CHAN Chien-Liang

  Dept. of Electronic Engineering, Feng Chia University

• LIAO Chien-Nan

  Dept. of Electronic Engineering, Feng Chia University

• YIN Jin-Mu

  Dept. of Electronic Engineering, Feng Chia University

• CHIU Hsien-Chin

  Dept. of Electronic Engineering, Chang Gung University

• CHIEN Feng Tsun

  Dept. of Electronics Engineering, National Chiao Tung University

Journal

• 電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス

  電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス 106 (138), 189-194, 2006-06-26

Keywords

• InGaP
• InGaAs
• doped-channel EFTs
• source and drain resistance
• device linearity
• PAE

Details

• CRID: 1572824500239452672
• NII Article ID: 10018216949
• NII Book ID: AN10013254
• Text Lang: en
• Data Source:
  • CiNii Articles