High Performance Dual Metal Gate CMOS with High Mobility and Low Threshold Voltage Applicable to Bulk CMOS Technology

• YAMAGUCHI S.

  Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation

• TAI K.

  Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation

• HIRANO T.

  Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation

• ANDO T.

  Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation

• HIYAMA S.

  Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation

• WANG J.

  Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation

• HAGIMOTO Y.

  Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation

• NAGAHAMA Y.

  Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation

• KATO T.

  Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation

• NAGANO K.

  Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation

• YAMANAKA M.

  Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation

• TERAUCHI S.

  Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation

• KANDA S.

  Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation

• YAMAMOTO R.

  Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation

• TATESHITA Y.

  Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation

• TAGAWA Y.

  Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation

• IWAMOTO H.

  Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation

• SAITO M.

  Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation

• NAGASHIMA N.

  Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation

• KADOMURA S.

  Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation

Bibliographic Information

Other Title

• バルクCMOS向け低閾値電圧・高移動度デュアルメタルゲートトランジスタの開発

Journal

• 電子情報通信学会技術研究報告. ICD, 集積回路

  電子情報通信学会技術研究報告. ICD, 集積回路 106 (207), 121-126, 2006-08-10

Keywords

• metal gate
• High-k
• Gate-Last process
• (110)-substrate

Details

• CRID: 1573668925144315520
• NII Article ID: 10018234165
• NII Book ID: AN10013276
• Text Lang: ja
• Data Source:
  • CiNii Articles