Very Low Interface State Density From Thermally Oxidized Single-Domain 3C-Sic/6H-Sic Grown by Vapour-Liquid-Solid Mechanism

• Kin kiong Lee

• Gerhard Pensl

• Maher Soueidan

Bibliographic Information

Other Title

• Very Low Interface State Density From Thermally Oxidized Single Domain 3C Sic 6H Sic Grown by Vapour Liquid Solid Mechanism

Abstract

コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌

Journal

• Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP

  Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 45 (9A), 6823-6829, 2006-09

  Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

Keywords

• silicon carbide
• interface traps
• dry oxidation
• capacitance-voltage
• conductance-voltage

Details

• CRID: 1520009408710567808
• NII Article ID: 10018245276
• NII Book ID: AA10457675
• ISSN: 00214922
• NDL BIB ID: 8055268
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8055268
• Text Lang: en
• NDL Source Classification:
  • ZM35(科学技術--物理学)
• Data Source:
  • NDL
  • CiNii Articles