Acid Generation Mechanism of Poly(4-hydroxystyrene)-Based Chemically Amplified Resists for Post-Optical Lithography: Acid Yield and Deprotonation Behavior of Poly(4-hydroxystyrene) and Poly(4-methoxystyrene)

• Atsuro Nakano

• Takahiro Kozawa

• Kazumasa Okamoto

Bibliographic Information

Other Title

• Acid Generation Mechanism of Poly 4 hydroxystyrene Based Chemically Amplified Resists for Post Optical Lithography Acid Yield and Deprotonation Behavior of Poly 4 hydroxystyrene and Poly 4 methoxystyrene

Abstract

コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌

Journal

• Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP

  Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 45 (9A), 6866-6871, 2006-09

  Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

Keywords

• acid generation mechanism
• electron beam
• EUV

Details

• CRID: 1520572357384408448
• NII Article ID: 10018245439
• NII Book ID: AA10457675
• ISSN: 00214922
• ISSN: 13474065
• ISSN: http://id.crossref.org/issn/13474065
• DOI: 10.1143/jjap.45.6866
• NDL BIB ID: 8055401
• Web Site: http://id.ndl.go.jp/bib/8055401
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8055401
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.45.6866
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.45.6866/pdf
• Text Lang: en
• NDL Source Classification:
  • ZM35(科学技術--物理学)
• Data Source:
  • NDL
  • Crossref
  • CiNii Articles