Small-Signal and Noise Model of Fully Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Devices for Low-Noise Amplifier

• Guechol Kim

• Bunsei Murakami

• Masaru Goto

書誌事項

タイトル別名

• Small Signal and Noise Model of Fully Depleted Silicon on Insulator Metal Oxide Semiconductor Devices for Low Noise Amplifier

抄録

コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌

収録刊行物

• Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP

  Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 45 (9A), 6872-6877, 2006-09

  Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

キーワード

• FD-SOI
• non-quasi-static effect
• thermal noise
• induced gate noise

詳細情報

• CRID: 1520572358698706944
• NII論文ID: 10018245497
• NII書誌ID: AA10457675
• ISSN: 00214922
• NDL書誌ID: 8055493
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8055493
• 本文言語コード: en
• NDL 雑誌分類:
  • ZM35(科学技術--物理学)
• データソース種別:
  • NDL
  • CiNii Articles