Influences of Electron Beam Irradiation on Impact Value for Silica Glass

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  • Iwata Keisuke
    Department of Metallurgical Engineering, Graduate School of Engineering, Tokai University
  • Tonegawa Akira
    Department of Science and Technology, Unified Graduate School of Science and Technology, Tokai University
  • Nishi Yoshitake
    Department of Metallurgical Engineering, Graduate School of Engineering, Tokai University Department of Science and Technology, Unified Graduate School of Science and Technology, Tokai University

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  • 石英ガラスの衝撃値に及ぼす電子線照射の影響
  • セキエイ ガラス ノ ショウゲキチ ニ オヨボス デンシセン ショウシャ ノ エイキョウ

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Abstract

  Influences of electron beam (EB) irradiation on the impact value for silica glass were studied by using a standard Charpy impact test. EB irradiation below 0.216 MGy, which was one of short-time treatments of dry process at low temperature, increased impact values of the glass. As the EB irradiation generated dangling bonds of the E′ center at the silicon-oxygen atomic pairs in the silica glass, partial relaxation occurred at points of residual strain near dangling bonds in the network structure mainly constructed with silicon-oxygen pairs. If the inter-atomic distance of the silicon-oxygen pairs became to be optimum potential curves of the silica glass, the relaxation should increase the bonding energy of the network structure. Evidently, the increased impact value was mainly due to an increase in the bonding energy for the silicon-oxygen atomic pairs in the atomic network structure, as well as a relaxation of the network structure.<br>

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