High Power Green Laser and Annealing Optical System for the Low Temperature Polycrystalline Silicon Process for Liquid Crystal Displays and Organic Light Emitting Diode Displays

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  • OKAMOTO Tatsuki
    Mitsubishi Electric Corporation Advanced Technology R & D Center
  • KOJIMA Tetsuo
    Mitsubishi Electric Corporation Advanced Technology R & D Center
  • YURA Shinsuke
    Mitsubishi Electric Corporation Advanced Technology R & D Center
  • SONO Atsuhiro
    Mitsubishi Electric Corporation Advanced Technology R & D Center
  • KUROSAWA Miki
    Mitsubishi Electric Corporation Advanced Technology R & D Center

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  • 液晶および有機EL向け低温ポリシリコンプロセス用高出力グリーンレーザ-およびアニール光学系
  • エキショウ オヨビ ユウキ EL ムケ テイオン ポリシリコンプロセスヨウ コウシュツリョク グリーンレーザー オヨビ アニール コウガクケイ

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Abstract

Low temperature polycrystalline silicon (LTPS) thin film transistors are necessary for creating high performance liquid crystal displays and organic light emitting diode displays. Excimer lasers have been used as the laser source for this process. However, this method presents two problems: 1) daily maintenance, which includes exchanging the laser gas and cleaning the laser windows, and 2) the limited process window of the optimum laser energy density for obtaining maximum mobility. To overcome these problems, we applied a green laser (second harmonics of a Q-switched Nd: YAG laser) instead of an excimer laser. This paper describes the high power green laser for LTPS, the annealing optical system for green lasers, and the poly-Si crystallization by a green laser.

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