101 GHz fTmax SiGe:C HBT integrated into 0.25 μm CMOS with conventional LOCOS isolation

• YAMAGATA H.

Journal

• Proc. European Solid State Device Research Conference, 2004

  Proc. European Solid State Device Research Conference, 2004 2004

Details

• CRID: 1572824500216702848
• NII Article ID: 10018312326
• Data Source:
  • CiNii Articles