High On/Off Ratio in Enhancement-Mode AlxGa1-xN/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact

• Takahiro Fujii

• Norio Tsuyukuchi

• Motoaki Iwaya

Bibliographic Information

Other Title

• High On Off Ratio in Enhancement Mode AlxGa1 xN GaN Junction Heterostructure Field Effect Transistors with P Type GaN Gate Contact

Journal

• Japanese journal of applied physics. Part 2, Letters & express letters

  Japanese journal of applied physics. Part 2, Letters & express letters 45 (37-41), L1048-1050, 2006-10

  Tokyo : Japan Society of Applied Physics

Keywords

• JHFET
• enhancement mode
• leakage current
• on/off ratio of drain-source current

Details

• CRID: 1520291855467702784
• NII Article ID: 10018340710
• NII Book ID: AA11906093
• ISSN: 00214922
• NDL BIB ID: 8519967
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8519967
• Text Lang: en
• NDL Source Classification:
  • ZM35(科学技術--物理学)
• Data Source:
  • NDL
  • CiNii Articles