n-Type and Ambipolar FET Characteristics Using Pyrazinophenanthrolines Linked with Oligothiophenes

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  • Jun-ichi Nishida
    Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
  • Shigeki Murakami
    Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
  • Hirokazu Tada
    Graduate School of Engineering Science, Osaka University
  • Yoshiro Yamashita
    Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology

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Abstract

<jats:title>Abstract</jats:title> <jats:p>Phenanthroline rings were used to generate n-type FET properties for the first time. A FET device based on a pyrazinophenanthroline with a quinquethiophene unit showed clear ambipolar FET characteristics.</jats:p>

Journal

  • Chemistry Letters

    Chemistry Letters 35 (11), 1236-1237, 2006-09-30

    Oxford University Press (OUP)

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