350V/150A AlGaN/GaN power HFET on Silicon substrate with source-via grounding (SVG) structure

• HIKITA M.

Journal

• IEDM Tech. Dig., 2004

  IEDM Tech. Dig., 2004 2004

Details

• CRID: 1573668925128749056
• NII Article ID: 10018406170
• Data Source:
  • CiNii Articles