Investigation of basal plane dislocations in the 4H-SiC epilayers grown on {0001} substrates

• TSUCHIDA H.

収録刊行物

• Mater. Sci. Forum

  Mater. Sci. Forum 483 97-100, 2005

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• CRID: 1573668925128809600
• NII論文ID: 10018406270
• データソース種別:
  • CiNii Articles