Control of Etched Pattern Profile in Quartz Dry Etching Processfor Fabricating Fine Quartz Mold of UV-Nanoimprint

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  • UVナノインプリントモールドにおける石英ドライエッチングの形状制御
  • UV ナノインプリント モールド ニ オケル セキエイ ドライ エッチング ノ ケイジョウ セイギョ

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Abstract

Nanoimprint lithography is one of the promising nano-fabrication technologies for nano devices such as semiconductors, optics, bio-medicals, storage media and so on, because of the advantages of nano-scale resolution, pattern printability and low cost method. We developed quartz mold fabrication process for UV nanoimprint lithography applied by the most advanced photomask fabrication techniques. In this paper, we investigated the correlation between positive ion species in a radio-frequency CFX⁄O2 plasma for quartz dry etching and etched quartz pattern profiles. The results shows that CF+, CF2+ ions decrease and O+, F+, CO2+ ions increase with increasing O2 gas flow. In addition, etched quartz pattern becomes taper profile because Cr hard mask layer is etched easily in case of high O2 gas flow, on the other hand some etching residue consist of fluorocarbon deposition occurs on the bottom of etched quartz pattern in case of low O2 gas flow. That indicates that etched quartz profile can be controlled by optimizing CFX⁄O2 plasma conditions (depo-rich⁄etch-rich) in quartz dry etching process. Especially O2 gas flow is one of key parameters to optimize CFX⁄O2 plasma conditions. Furthermore demonstrations of the pattern transfer were carried out by using our pillar array quartz mold. The result shows that fine patterns were successfully transferred to a photocurable polymer (PAK-01, Toyo Gosei Co., Ltd.) layer on Si substrate by UV nanoimprint instrument (Waseda Univ.).It shows that the geometry correspondence between our quartz mold pattern and the printed polymer pattern are exceedingly good.

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