高スピン分極フルホイスラー合金薄膜とスピンエレクトロニクスデバイス

• 薬師寺 啓

  東北大学金属材料研究所

• 高梨 弘毅

  東北大学金属材料研究所

書誌事項

タイトル別名

• Highly Spin-polarized Full-Heusler Alloy Films and Their Application to Spin-electronics Devices
• コウスピン ブンキョク フルホイスラー ゴウキン ハクマク ト スピンエレクトロニクスデバイス

抄録

  The recent development of the study on half-metallic full-Heusler alloy thin films and their application to spin-electronics devices are reviewed. The progress of preparation technique of Co-based full-Heusler alloy films with high L2₁ structural order has made it possible to obtain higher spin-polarization than that of typical transition metals and alloys (Co, CoFe, etc.). Resulting tunnel magnetoresistance in magnetic tunnel junctions exceeds 60% at room temperature. Our recent results on the current-perpendicular-to-plane magnetoresistance (CPP-GMR) devices with Co₂MnSi films are also shown. The resistance change-area product (ΔRA) at room temperature was 19 mΩμm², which is one order of magnitude larger than those in previously reported trilayer systems, resulting in the MR ratio of 2.4%. The enhanced ΔRA is considered to originate from the large spin polarization in a high-quality L2₁ Co₂MnSi film.<br>

収録刊行物

• 真空

  真空 49 (12), 700-705, 2006

  一般社団法人 日本真空学会

キーワード

• Electrical and Electronic Engineering
• Surfaces, Coatings and Films
• Condensed Matter Physics

詳細情報

• CRID: 1390001204064829312
• NII論文ID: 10018457461
• NII書誌ID: AN00119871
• DOI: 10.3131/jvsj.49.700
• ISSN: 18809413
• ISSN: 05598516
• NDL書誌ID: 8624037
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8624037
• Web Site: https://www.jstage.jst.go.jp/article/jvsj/49/12/49_12_700/_pdf
• 本文言語コード: ja
• データソース種別:
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  • NDL
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  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可