Modification of Local Structure and Its Influence on Electrical Activity of Near (310) Σ5 Grain Boundary in Bulk Silicon

• Kutsukake Kentaro

  Institute for Materials Research (IMR), Tohoku University

• Usami Noritaka

  Institute for Materials Research (IMR), Tohoku University

• Fujiwara Kozo

  Institute for Materials Research (IMR), Tohoku University

• Nose Yoshitaro

  Institute for Materials Research (IMR), Tohoku University

• Sugawara Takamasa

  Institute for Materials Research (IMR), Tohoku University

• Shishido Toetsu

  Institute for Materials Research (IMR), Tohoku University

• Nakajima Kazuo

  Institute for Materials Research (IMR), Tohoku University

書誌事項

タイトル別名

• Modification of Local Structure and Its Influence on Electrical Activity of Near (310) Σ5 Grain Boundary in Bulk Silicon
• Modification of Local Structure and Its Influence on Electrical Activity of Near 310 シグマ 5 Grain Boundary in Bulk Silicon

抄録

We report on the modification of the local structures of (310) Σ5 grain boundary in bulk silicon as the growth of crystal and its influence on electrical activity. The grain boundary was formed via floating-zone growth method utilizing bicrystal seed. The misalignment of the seed resulted in formation of the grain boundary with small deviations of crystal orientation from the Σ5 singular coincidence orientation. The deviations consist of tilt and twist components and they were found to monotonically decrease with respect to the distance from the seed crystal accompanied by the decrease in density of dislocations on the grain boundary. The change in the grain boundary structure allows a systematic study on the correlation between the structure and the electrical activity at the GB. The density of dislocations was found to control the electrical activity and the (310) Σ5 coincidence grain boundary without any dislocations is expected to show a very low electrical activity.

収録刊行物

• MATERIALS TRANSACTIONS

  MATERIALS TRANSACTIONS 48 (2), 143-147, 2007

  公益社団法人 日本金属学会

キーワード

• silicon
• bicrystal
• grain boundary
• dislocation
• electrical activity

詳細情報

• CRID: 1390001204250955008
• NII論文ID: 10018508540
• NII書誌ID: AA1151294X
• DOI: 10.2320/matertrans.48.143
• ISSN: 13475320
• ISSN: 13459678
• NDL書誌ID: 8623626
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8623626
• Web Site: https://www.jstage.jst.go.jp/article/matertrans/48/2/48_MBW200622/_pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
  • KAKEN
• 抄録ライセンスフラグ: 使用不可