Al_<0.17>Ga_<0.83>N Film Using Middle-Temperature Intermediate Layer Grown on (0001) Sapphire Substrate by Metal-Organic Chemical Vapor Deposition
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- Sumiyoshi Kazuhide SUMIYOSHI Kazuhide
- Department of Electrical and Electronic Engineering, The University of Tokushima
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- Tsukihara Masashi TSUKIHARA Masashi
- Venture Business Laboratory of Intellectual Property Office, The University of Tokushima
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- Kataoka Ken [他] KATAOKA Ken
- Department of Electrical and Electronic Engineering, The University of Tokushima
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- KAWAMICHI Syuichi
- Department of Electrical and Electronic Engineering, The University of Tokushima
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- OKIMOTO Takashi
- Department of Electrical and Electronic Engineering, The University of Tokushima
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- NISHINO Katsushi
- Department of Electrical and Electronic Engineering, The University of Tokushima
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- NAOI Yoshiki
- Department of Electrical and Electronic Engineering, The University of Tokushima
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- SAKAI Shiro
- Department of Electrical and Electronic Engineering, The University of Tokushima
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Author(s)
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- Sumiyoshi Kazuhide SUMIYOSHI Kazuhide
- Department of Electrical and Electronic Engineering, The University of Tokushima
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- Tsukihara Masashi TSUKIHARA Masashi
- Venture Business Laboratory of Intellectual Property Office, The University of Tokushima
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- Kataoka Ken [他] KATAOKA Ken
- Department of Electrical and Electronic Engineering, The University of Tokushima
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- KAWAMICHI Syuichi
- Department of Electrical and Electronic Engineering, The University of Tokushima
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- OKIMOTO Takashi
- Department of Electrical and Electronic Engineering, The University of Tokushima
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- NISHINO Katsushi
- Department of Electrical and Electronic Engineering, The University of Tokushima
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- NAOI Yoshiki
- Department of Electrical and Electronic Engineering, The University of Tokushima
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- SAKAI Shiro
- Department of Electrical and Electronic Engineering, The University of Tokushima
Journal
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- Japanese journal of applied physics Pt. 1 Regular papers, brief communications & review papers
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Japanese journal of applied physics Pt. 1 Regular papers, brief communications & review papers 46(2), 491-495, 2007-02-15
IOP Publishing
References: 12
-
1
- <no title>
-
KAWAGUCHI Y.
Phys. Status Solidi C 0, 2107, 2003
Cited by (1)
-
2
- <no title>
-
WU X. H.
Jpn. J. Appl. Phys. 35, L1648, 1996
Cited by (1)
-
3
- <no title>
-
KAWASHIMA T.
J. Cryst. Growth 272, 377, 2004
Cited by (1)
-
4
- <no title>
-
HEIKMAN S.
Jpn. J. Appl. Phys. 44, L405, 2005
Cited by (1)
-
5
- <no title>
-
TSUKIHARA M.
Jpn. J. Appl. Phys. 42, 1514, 2003
Cited by (1)
-
6
- <no title>
-
SUMIYOSHI K.
Phys. Status Solidi C 3, 1633, 2006
Cited by (1)
-
7
- <no title>
-
NAKAMURA S.
Jpn. J. Appl. Phys. 30, L1705, 1991
Cited by (1)
-
8
- <no title>
-
VENNEGUES P.
J. Cryst. Growth 187, 167, 1998
Cited by (2)
-
9
- Selective growth of wurtzite GaN and Al_xGa_<1-x>N on GaN/sapphire substrates by metalorganic vapor phase epitaxy
-
KATO Y.
J. Cryst. Growth 144, 133-140, 1994
Cited by (16)
-
10
- <no title>
-
HEYING B.
Appl. Phys. Lett. 68, 643, 1996
Cited by (10)
-
11
- <no title>
-
CHO H. K.
J. Appl. Phys. 89, 2617, 2001
Cited by (1)
-
12
- <no title>
-
SUMIYA M.
J. Appl. Phys. 93, 1311, 2003
Cited by (2)