Al0.17Ga0.83N Film Using Middle-Temperature Intermediate Layer Grown on (0001) Sapphire Substrate by Metal-Organic Chemical Vapor Deposition

• Kazuhide Sumiyoshi

• Masashi Tsukihara

• Ken Kataoka

書誌事項

タイトル別名

• Al0 17Ga0 83N Film Using Middle Temperature Intermediate Layer Grown on 0001 Sapphire Substrate by Metal Organic Chemical Vapor Deposition

抄録

コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌

収録刊行物

• Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP

  Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 46 (2), 491-495, 2007-02

  Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

キーワード

• middle temperature
• aluminum gallium nitride

詳細情報

• CRID: 1520572357679538176
• NII論文ID: 10018544667
• NII書誌ID: AA10457675
• ISSN: 00214922
• ISSN: 13474065
• ISSN: http://id.crossref.org/issn/13474065
• DOI: 10.1143/jjap.46.491
• NDL書誌ID: 8650808
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8650808
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.46.491
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.46.491/pdf
• 本文言語コード: en
• NDL 雑誌分類:
  • ZM35(科学技術--物理学)
• データソース種別:
  • NDL
  • Crossref
  • CiNii Articles