Current status and future prospects of semiconducting alkaline-earth-metal silicides

• SUEMASU Takashi

  Institute of Applied Physics, University of Tsukuba PRESTO, Japan Science and Technology Agency

• IMAI Yoji

  National Institute of Advanced Industrial Science and Technology

Bibliographic Information

Other Title

• 多元系シリサイドの新展開
• 最近の展望 多元系シリサイドの新展開--半導体BaSi2を例に
• サイキン ノ テンボウ タゲンケイ シリサイド ノ シンテンカイ ハンドウタイ BaSi2 オ レイ ニ
• —半導体BaSi2を例に—

Abstract

β-FeSi₂ has been extensively studied as a Si-based infrared-light emitter over the past ten years. On the other hand, alkaline-earth-metal silicides such as Mg₂Si and BaSi₂ have attracted less attention. However, they have very interesting features as follows. The band gap of Mg₂Si can be controlled from 0.7 to 0 eV by replacing the Si atoms with other group 14 elements such as Ge, Sn and Pb. BaSi₂ has a very large optical absorption coefficient, comparable to that of chalcopyrite semiconductors. In addition, it was recently reported that the band gap of BaSi₂ increases from 1.3 eV by the replacement of some of the Ba atoms with Sr. In this article, recent studies on BaSi₂ such as epitaxial growth techniques, electrical and optical properties and band structure calculations are described.

Journal

• Oyo Buturi

  Oyo Buturi 76 (3), 264-268, 2007-03-10

  The Japan Society of Applied Physics

Keywords

• molecular beam epitaxy
• band gap
• BaSi₂
• calculation
• electronic structure

Details

• CRID: 1390282752337317632
• NII Article ID: 10018560198
• NII Book ID: AN00026679
• DOI: 10.11470/oubutsu.76.3_264
• ISSN: 21882290
• ISSN: 03698009
• NDL BIB ID: 8731067
• Web Site: http://id.ndl.go.jp/bib/8731067
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8731067
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed