# Growth of a Two-Inch GaN Single Crystal Substrate Using the Na Flux Method

## 抄録

We succeeded in growing a GaN single crystal substrate with diameter of about two inches using the Na flux method. Our success is due to the development of a new apparatus for growing large GaN single crystals. The crystal grown in this study has a low dislocation density of $2.3\times 10^{5}$ cm-2. The secondary ion mass spectrometry (SIMS) technique demonstrates that the Na element is difficult to be taken in the crystal in both the "$+$" and "$-$" $c$ directions, resulting in a Na concentration of $4.2\times 10^{14}$ cm-3 in the crystal. Our success in growing a two-inch GaN substrate with a low impurity content and low dislocation density should pave the way for the Na flux method to become a practical application.

## 収録刊行物

• Japanese journal of applied physics. Pt. 2, Letters

Japanese journal of applied physics. Pt. 2, Letters 45(43), L1136-L1138, 2006-11-25

Japan Society of Applied Physics

## 各種コード

• NII論文ID(NAID)
10018632234
• NII書誌ID(NCID)
AA10650595
• 本文言語コード
EN
• 資料種別
SHO
• ISSN
0021-4922
• NDL 記事登録ID
8548182
• NDL 雑誌分類
ZM35(科学技術--物理学)
• NDL 請求記号
Z54-J337
• データ提供元
CJP書誌  NDL  JSAP

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