Ge Implantation to Improve Crystallinity and Productivity for Solid Phase Epitaxy Prepared by Atomic Mass Unit Cross Contamination-Free Technique

• Kong-Soo Lee

• Dae-Han Yoo

• Jae-Jong Han

Bibliographic Information

Other Title

• Ge Implantation to Improve Crystallinity and Productivity for Solid Phase Epitaxy Prepared by Atomic Mass Unit Cross Contamination Free Technique

Journal

• Japanese journal of applied physics. Part 2, Letters & express letters

  Japanese journal of applied physics. Part 2, Letters & express letters 45 (42-45), L1193-1196, 2006-11

  Tokyo : Japan Society of Applied Physics

Keywords

• pre-amorphization implantation
• PAI
• SPE
• AMU contamination
• enriched 72Ge
• ribbon-like wide beam

Details

• CRID: 1522543654758860544
• NII Article ID: 10018632502
• NII Book ID: AA11906093
• ISSN: 00214922
• NDL BIB ID: 8548560
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8548560
• Text Lang: en
• NDL Source Classification:
  • ZM35(科学技術--物理学)
• Data Source:
  • NDL
  • CiNii Articles