Characterization of High-Performance Polycrystalline Silicon Complementary Metal-Oxide-Semiconductor Circuits

• Genshiro Kawachi

• Yoshiaki Nakazaki

• Hiroyuki Ogawa

Bibliographic Information

Other Title

• Characterization of High Performance Polycrystalline Silicon Complementary Metal Oxide Semiconductor Circuits

Abstract

コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌

Journal

• Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP

  Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 46 (1), 51-55, 2007-01

  Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

Keywords

• thin film transistors
• excimer-laser annealing
• poly-Si
• plasma oxidation
• ring oscillator
• CMOS
• inverter
• propagation delay
• power-delay product

Details

• CRID: 1520290883134062592
• NII Article ID: 10018704212
• NII Book ID: AA10457675
• ISSN: 00214922
• NDL BIB ID: 8605620
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8605620
• Text Lang: en
• NDL Source Classification:
  • ZM35(科学技術--物理学)
• Data Source:
  • NDL
  • CiNii Articles