Control of Threshold Voltage of Enhancement-Mode AlxGa1-xN/GaN Junction Heterostructure Field-Effect Transistors Using p-GaN Gate Contact

• Takahiro Fujii

• Norio Tsuyukuchi

• Yoshikazu Hirose

Bibliographic Information

Other Title

• Control of Threshold Voltage of Enhancement Mode AlxGa1 xN GaN Junction Heterostructure Field Effect Transistors Using p GaN Gate Contact

Abstract

コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌

Journal

• Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP

  Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 46 (1), 115-118, 2007-01

  Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

Keywords

• HFETs
• AIN molar fraction
• p-type GaN gate
• JHFET

Details

• CRID: 1520290882237154048
• NII Article ID: 10018704414
• NII Book ID: AA10457675
• ISSN: 00214922
• ISSN: 13474065
• ISSN: http://id.crossref.org/issn/13474065
• DOI: 10.1143/jjap.46.115
• NDL BIB ID: 8605929
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8605929
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.46.115
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.46.115/pdf
• Text Lang: en
• NDL Source Classification:
  • ZM35(科学技術--物理学)
• Data Source:
  • NDL
  • Crossref
  • CiNii Articles