Integration Process of Impact-Ionization Metal-Oxide-Semiconductor Devices with Tunneling Field-Effect-Transistors and Metal-Oxide-Semiconductor Field-Effect Transistors

• Woo Young Choi

• Jong Duk Lee

• Byung-Gook Park

書誌事項

タイトル別名

• Integration Process of Impact Ionization Metal Oxide Semiconductor Devices with Tunneling Field Effect Transistors and Metal Oxide Semiconductor Field Effect Transistors

抄録

コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌

収録刊行物

• Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP

  Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 46 (1), 122-124, 2007-01

  Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

キーワード

• I-MOS
• TFET
• MOSFET

詳細情報

• CRID: 1520290883688369792
• NII論文ID: 10018704436
• NII書誌ID: AA10457675
• ISSN: 00214922
• NDL書誌ID: 8605965
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8605965
• 本文言語コード: en
• NDL 雑誌分類:
  • ZM35(科学技術--物理学)
• データソース種別:
  • NDL
  • CiNii Articles