Influence of Grain Size Distributions on the Resistivity of 80 nm Wide Cu Interconnects
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- Khoo Khyoupin
- Department of Materials Science and Engineering, Ibaraki University
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- Onuki Jin
- Department of Materials Science and Engineering, Ibaraki University
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- Nagano Takahiro
- Department of Materials Science and Engineering, Ibaraki University
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- Chonan Yasunori
- Department of Electronics and Information System, Faculty of System Science and Technology, Akita Prefectural University
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- Akahoshi Haruo
- Hitachi Research Laboratory, Hitachi Ltd.
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- Tobita Toshimi
- Hitachi Kyowa Engineering Ltd.
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- Chiba Masahiro
- Hitachi Kyowa Engineering Ltd.
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- Saito Tatsuyuki
- Micro Device Division, Hitachi Ltd.
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- Ishikawa Kensuke
- Micro Device Division, Hitachi Ltd.
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The grain length distributions in the longitudinal direction of 80 nm wide Cu interconnects as a function of interconnect height and grain size influence on the resistivity have been investigated. Cu interconnects with 300 nm and 500 nm height had very similar average grain lengths when the trench depth was less than 260 nm, while for the 500 nm high Cu interconnect, larger grains were dominant when the trench depth was above 260 nm. Resistivity of the 80 nm wide Cu interconnect with 500 nm height was 10% lower than that for the 300 nm high interconnect.
収録刊行物
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- MATERIALS TRANSACTIONS
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MATERIALS TRANSACTIONS 48 (3), 622-624, 2007
公益社団法人 日本金属学会
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詳細情報 詳細情報について
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- CRID
- 1390001204251405824
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- NII論文ID
- 130004453514
- 10018735386
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- NII書誌ID
- AA1151294X
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- ISSN
- 13475320
- 13459678
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- NDL書誌ID
- 8671344
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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