Fabrication and Characterization of a Schottky Barrier Diode-Type Ultraviolet Sensor using a ZnO Single Crystal

• Endo Haruyuki

  Iwate Industrial Research Institute Tohoku University

• Sugibuchi Mayo

  Iwate Information System Corp.

• Takahashi Kohsuke

  Iwate Information System Corp.

• Goto Shunsuke

  Lightom Inc.

• Hasegawa Tatsuo

  Iwate Industrial Research Institute

• Ohshima Eriko

  Iwate Industrial Research Institute

• Meguro Kazuyuki

  Iwate Industrial Research Institute

• Hane Kazuhiro

  Tohoku University

• Kashiwaba Yasube

  Iwate University

抄録

In this paper, a visible light blind ultraviolet sensor of a Schottky barrier photodiode using a ZnO single crystal is described. The sensor consists of a semitransparent Pt film for the Schottky electrode and Al thin film for the ohmic electrode on an n-type ZnO single crystal substrate grown by the hydrothermal method. The responsivity was 0.12 A/W at the wavelength of 365 nm and the photoresponse time was 12 μs.

収録刊行物

• 電気学会論文誌Ｅ（センサ・マイクロマシン部門誌）

  電気学会論文誌Ｅ（センサ・マイクロマシン部門誌） 127 (3), 131-135, 2007

  一般社団法人 電気学会

キーワード

• ultraviolet sensor
• ZnO single crystal
• Schottky barrier photodiode

詳細情報

• CRID: 1390282679438366976
• NII論文ID: 10018737742
• NII書誌ID: AN1052634X
• DOI: 10.1541/ieejsmas.127.131
• ISSN: 13475525
• ISSN: 13418939
• NDL書誌ID: 8728674
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8728674
• Web Site: http://www.jstage.jst.go.jp/article/ieejsmas/127/3/127_3_131/_pdf
• 本文言語コード: en
• データソース種別:
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  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可