A Robust Embedded Ladder-Oxide/Cu Multilevel Interconnect Technology for 0.13μm Complementary Metal Oxide Semiconductor Generation

• Noriaki Oda

• Shinya Ito

• Toshiyuki Takewaki

Bibliographic Information

Other Title

• Robust Embedded Ladder Oxide Cu Multilevel Interconnect Technology for 0 13マイクロm Complementary Metal Oxide Semiconductor Generation

Abstract

コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌

Journal

• Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP

  Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 46 (3A), 954-961, 2007-03

  Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

Keywords

• CMOS
• Cu interconnect
• low-k
• 0.13μmnode
• single damascene
• copper plug

Details

• CRID: 1520853833676291328
• NII Article ID: 10018866719
• NII Book ID: AA10457675
• ISSN: 00214922
• NDL BIB ID: 8687941
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8687941
• Text Lang: en
• NDL Source Classification:
  • ZM35(科学技術--物理学)
• Data Source:
  • NDL
  • CiNii Articles