Ambipolar Transport in Field-Effect Transistors Based on Composite Films of Poly(3-hexylthiophene) and Fullerene Derivative

• Miho Shibao

• Takeomi Morita

• Wataru Takashima

Bibliographic Information

Other Title

• Ambipolar Transport in Field Effect Transistors Based on Composite Films of Poly 3 hexylthiophene and Fullerene Derivative

Journal

• Japanese journal of applied physics. Part 2, Letters & express letters

  Japanese journal of applied physics. Part 2, Letters & express letters 46 (4-7), L123-125, 2007-02

  Tokyo : Japan Society of Applied Physics

Keywords

• PCBM
• FET
• mobility
• threshold voltage

Details

• CRID: 1520573330057182208
• NII Article ID: 10018868001
• NII Book ID: AA11906093
• ISSN: 00214922
• NDL BIB ID: 8661988
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8661988
• Text Lang: en
• NDL Source Classification:
  • ZM35(科学技術--物理学)
• Data Source:
  • NDL
  • CiNii Articles