Dislocations in AlN epilayers grown on sapphire substrate by high-temperature metal-organic vapor phase epitaxy

• Masataka Imura

• Kiyotaka Nakano

• Naoki Fujimoto

抄録

コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌

収録刊行物

• Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP

  Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 46 (4A), 1458-1462, 2007-04

  Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

キーワード

• AlN
• small-angle grain boundary
• threading dislocation
• HT-MOVPE
• TEM

詳細情報

• CRID: 1520572357730989824
• NII論文ID: 10018900504
• NII書誌ID: AA10457675
• ISSN: 00214922
• ISSN: 13474065
• ISSN: http://id.crossref.org/issn/13474065
• ISSN: http://id.crossref.org/issn/00214922
• DOI: 10.1143/jjap.46.1458
• NDL書誌ID: 8705917
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8705917
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.46.1458
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.46.1458/pdf
• 本文言語コード: en
• NDL 雑誌分類:
  • ZM35(科学技術--物理学)
• データソース種別:
  • NDL
  • Crossref
  • CiNii Articles