Ambipolar field-effect transistors based on poly(3-hexylthiophene)/fullerene derivative bilayer films

• Keiichi Kaneto

• Makoto Yano

• Miho Shibao

Bibliographic Information

Other Title

• Ambipolar field effect transistors based on poly 3 hexylthiophene fullerene derivative bilayer films

Abstract

コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌

Journal

• Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP

  Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 46 (4A), 1736-1738, 2007-04

  Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

Keywords

• FET
• poly(3-hexylthiophene)
• fullerene derivatives
• PCBM
• bilayer film
• ambipolar transport

Details

• CRID: 1520572358543888768
• NII Article ID: 10018901560
• NII Book ID: AA10457675
• ISSN: 00214922
• ISSN: 13474065
• DOI: 10.1143/jjap.46.1736
• NDL BIB ID: 8707545
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8707545
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.46.1736
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.46.1736/pdf
• Text Lang: en
• NDL Source Classification:
  • ZM35(科学技術--物理学)
• Data Source:
  • NDL
  • Crossref
  • CiNii Articles