Solid-Phase Diffusion of Carbon into GaN Using SiNx/CNx/GaN Structure

• Kimura, Takeshi

• Ootomo, Shinya

• Nomura, Takehiko

• Yoshida, Seikoh

• Hashizume, Tamotsu

抄録

We performed a feasibility study on the solid-phase diffusion of carbon into GaN using a SiNx/CNx/GaN structure prepared by electron-cyclotron-resonance-assisted chemical vapor deposition. An X-ray photoelectron spectroscopy study on the CNx layer deposited on GaN showed that its energy positions and spectrum features are very close to those of a C-N bond, and the N composition was estimated to be 24 %, indicating a highly C-rich layer. No degradation in the chemical properties of the GaN surface was found after the diffusion process at 1000 ℃. A secondary ion mass spectrometry result clearly showed a diffusion of carbon into GaN. We also observed an increase in resistivity for the C-diffused GaN layer.

収録刊行物

• Japanese Journal of Applied Physics. Pt. 2, Letters & express letters

  Japanese Journal of Applied Physics. Pt. 2, Letters & express letters 46 (10), L224-L226, 2007-03

  Japan Society of Applied Physics

キーワード

• doping
• carbon
• diffusion
• GaN
• CN
• SiN
• XPS
• ECR-CVD

詳細情報

• CRID: 1050845763925480064
• NII論文ID: 10018903165
• NII書誌ID: AA11906093
• HANDLE: 2115/33076
• NDL書誌ID: 8695453
• ISSN: 00214922
• Web Site: http://id.ndl.go.jp/bib/8695453
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8695453
• 本文言語コード: en
• 資料種別: journal article
• データソース種別:
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  • NDL
  • CiNii Articles