High speed chalcogenide random access memory based on Si2Sb2Te5

• Ting Zhang

• Zhitang Song

• Feng Rao

収録刊行物

• Japanese journal of applied physics. Part 2, Letters & express letters

  Japanese journal of applied physics. Part 2, Letters & express letters 46 (8-11), L247-249, 2007-03

  Tokyo : Japan Society of Applied Physics

キーワード

• chalcogenide random access memory
• phase change
• Si2Sb2Te5
• data retention

詳細情報

• CRID: 1520291855205833984
• NII論文ID: 10018903265
• NII書誌ID: AA11906093
• ISSN: 00214922
• NDL書誌ID: 8695569
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8695569
• 本文言語コード: en
• NDL 雑誌分類:
  • ZM35(科学技術--物理学)
• データソース種別:
  • NDL
  • CiNii Articles