Growth and emission property of ZnO film by hydrogen remote plasma CVD

• SHIMIZU Yoshimi

  Research Institute of Electronics, Shizuoka University

• NAKAMURA Atsushi

  Research Institute of Electronics, Shizuoka University

• AOKI Toru

  Research Institute of Electronics, Shizuoka University

• TEMMYOU Jiro

  Research Institute of Electronics, Shizuoka University

Bibliographic Information

Other Title

• 水素リモートプラズマCVD法によるZnOの成長と発光特性(発光型・非発光型ディスプレイ合同研究会)
• 水素リモートプラズマCVD法によるZnOの成長と発光特性
• スイソ リモートプラズマ CVDホウ ニ ヨル ZnO ノ セイチョウ ト ハッコウ トクセイ

Abstract

c-plane ZnO films were grown on a-plane sapphire substrate by remote plasma enhanced chemical vapor deposition using a diethylzinc and oxygen gas with hydrogen plasma radicals, which was generated by rf-hollow cathode jet plasma, in order to decompose the diethylzinc at low temperature. ZnO (0001) films were grown on sapphire (11-20) substrates at substrate temperature 300℃. Deep emission of PL spectra was decreased by control of H_2 and O_2 gas flow ratio.

Journal

• ITE Technical Report

  ITE Technical Report 27.4 (0), 61-64, 2003

  The Institute of Image Information and Television Engineers

Keywords

• ZnO
• MOCVD
• Diethylzinc
• Remote plasma

Details

• CRID: 1390282679504598912
• NII Article ID: 110003672180
• NII Article ID: 10018990110
• NII Article ID: 110003268314
• NII Book ID: AN1059086X
• ISSN: 09135685
• ISSN: 24241970
• ISSN: 13426893
• DOI: 10.11485/itetr.27.4.0_61
• NDL BIB ID: 6499490
• NDL BIB ID: 6468121
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6499490
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6468121
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • CiNii Articles
• Abstract License Flag: Disallowed