Luminescent properties of SrGa_2S_4:Eu thin film carried out by Si-type field emitter..

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  • Nakajima H.
    Graduate School of Electronic Science and Technology, Shizuoka Univ.
  • Iwamaru M.
    Research Institute of Electronics, Shizuoka Univ.
  • Sawada K.
    Toyohashi Univ. of Tech.
  • Ono T.
    Toyohashi Univ. of Tech.
  • Kominami H.
    Graduate School of Electronic Science and Technology, Shizuoka Univ.
  • Nakanishi Y.
    Graduate School of Electronic Science and Technology, Shizuoka Univ.:Research Institute of Electronics, Shizuoka Univ.
  • Hatanaka Y.
    Aichi Univ. of Tech.

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Other Title
  • Siで作製したコーン型フィールドエミッタを用いたSrGa_2S_4:Eu蛍光体薄膜の発光特性(発光型・非発光型ディスプレイ合同研究会)
  • Siで作製したコーン型フィールドエミッタを用いたSrGa2S4:Eu蛍光体薄膜の発光特性
  • Si デ サクセイ シタ コーンガタ フィールドエミッタ オ モチイタ SrGa2S4 Eu ケイコウタイ ハクマク ノ ハッコウ トクセイ

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Abstract

Preparation of SrGa_2S_4:Eu thin films have been carried out by multi source deposition technique, then the structural and luminescent properties of the films were characterized. It was shown in this experiment that the crystallinity, luminance and chromaticity of emission were improved by the annealing in H_2S atmosphere. These thin films excited by electron beam showed green emission due to SrGa_2S_4:Eu under excitation with 2kV and 60 μA/cm^2. Next CL characteristics of SrGa_2S_4:Eu thin film combined with Si-type field emitter were investigated. It showed the luminance of 5 cd/m^2 and luminous efficiency of 0.2 lm/W, respectively, under the excitation with 1kV and 8 μA/cm^2.

Journal

  • ITE Technical Report

    ITE Technical Report 27.4 (0), 21-24, 2003

    The Institute of Image Information and Television Engineers

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