Luminescent Properties of SrS:Cu, F TFEL Devices

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  • Nakajima T.
    Research Institute of Electronics, Shizuoka University
  • Kominami H.
    Shizuoka University, Graduate School of Electronic Science and Technology
  • Nakanishi Y.
    Research Institute of Electronics, Shizuoka University:Shizuoka University, Graduate School of Electronic Science and Technology
  • Hatanaka Y.
    Research Institute of Electronics, Shizuoka University:Shizuoka University, Graduate School of Electronic Science and Technology

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Other Title
  • SrS:Cu, F薄膜EL素子の発光特性
  • SrS Cu F ハクマク EL ソシ ノ ハッコウ トクセイ

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Abstract

SrS:Cu, F TFEL devices were prepared by the electron beam evaporation and its luminescent properties were investigated. PL spectra of SrS:Cu, F phosphors were measured under excitation with 325 nm of He-Cd laser at room temperature. It was shown that PL spectra, where concentration of Cu was 0.3 at%, showed strong blue emission with a peak at about 470 nm. Standard double insulator structure was employed for EL device fabrication using Y_2 O_3 films as insulating layers and ZnS films as buffer layers. The TFEL devices prepared with rapid thermal annealing at 900℃ showed the same blue emission as PL spectrum. The maximum luminance of 80 cd/m^2 and CIEx=0.13, y=0.22 could be obtained from the device with a Cu content of 0.1 at% by driving at 1kHz pulse.

Journal

  • ITE Technical Report

    ITE Technical Report 25.4 (0), 71-75, 2001

    The Institute of Image Information and Television Engineers

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