Electrical Characteristics of BaAl_2S_4:Eu EL Devices

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  • Kawanishi Mitsuhiro
    Department of Electronics & Communicasions, School of Science & Technology, Meiji University
  • Miura Noboru
    Department of Electronics & Communicasions, School of Science & Technology, Meiji University
  • Matsumoto Hironaga
    Department of Electronics & Communicasions, School of Science & Technology, Meiji University
  • Nakano Ryotaro
    Department of Electronics & Communicasions, School of Science & Technology, Meiji University

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Other Title
  • BaAl_2S_4:Eu EL素子の電気的特性
  • BaAl2S4 Eu EL ソシ ノ デンキテキ トクセイ

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Abstract

Electrical Characteristics of BaAl_2S_4:Eu EL device and Ta_2O_5 thin film were studied. BaAl_2S_4:Eu EL device show high luminance. To obtain high luminance, BaAl_2S_4:Eu EL device need high transferred charge density compared with that of ZnS:Mn EL device. In our device, to use insulating layer having conductivity can be augmented the insufficient transferred charge in BaAl_2S_4:Eu phosphor layer. This is a cause of low efficiency. Therefore the possibility of improvement of luminous efficiency was studied from the viewpoint of reduction of transferred charge.

Journal

  • ITE Technical Report

    ITE Technical Report 25.4 (0), 95-100, 2001

    The Institute of Image Information and Television Engineers

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